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    1.5SMC68AT3 1.5SMC24AT3 1.5SMC51AT3 1.5SMC30AT3 1.5SMC13AT 1.5SMC56AT3 1.5SMC33AT3 1.5SMC12AT3 1.5SMC10AT3 1.5SMC15AT3G

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ONSEMI[ON Semiconductor]
Part No. 1.5SMC68AT3 1.5SMC24AT3 1.5SMC51AT3 1.5SMC30AT3 1.5SMC13AT 1.5SMC56AT3 1.5SMC33AT3 1.5SMC12AT3 1.5SMC10AT3 1.5SMC15AT3G 1.5SMC7.5AT3 1.5SMC8.2AT3 1.5SMCXXXAT3 15SMC68AT3 1.5SMCXXXAT3G 1.5SMC11AT3 1.5SMC13AT3 1.5SMC15AT3 1.5SMC16AT3 1.5SMC18AT3 1.5SMC20AT3 1.5SMC22AT3 1.5SMC27AT3 1.5SMC36AT3 1.5SMC39AT3 1.5SMC43AT3 1.5SMC47AT3 1.5SMC6.8AT3 1.5SMC62AT3G 1.5SMC82AT3 1.5SMC9.1AT3 1.5SMC91AT3 1.5SMC62AT3 1.5SMC16A 1.5SMC22A 1.5SMC24A 1.5SMC27A 1.5SMC43A 1.5SMC47A 1.5SMC51A 1.5SMC56A 1.5SMC68A 1.5SMC82A 1.5SMC15A 1.5SMC62A 1.5SMC75A 1.5SMC75AT3
OCR Text ....com 5 1.5SMC6.8AT3 Series typical PROTECTION CIRCUIT Zin Vin LOAD VL V Vin (TRANSIENT) VL V OVERSHOOT DUE TO INDUCTIVE EFFECTS Vin (TRANSIENT) VL Vin td tD = TIME DELAY DUE TO CAPACITIVE EFFECT t t Fi...
Description Zener Diode
Transistor Suppressor
High Power
1500 Watt Peak Power Zener Transient Voltage Suppressors
ELR 2/1-230Z
1500 Watt Peak Power Zener Transient Voltage Suppressors 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE

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    1N5356B 1N5364B 1N5347B 1N5349B 1N5339B 1N5371B 1N5338B 1N5352B 1N5366B 1N5374B 1N5372B 1N5375B 1N5333B 1N5378B 1N5344B

Microsemi, Corp.
Motorola Mobility Holdings, Inc.
Motorola Inc
Motorola, Inc.
MOTOROLA[Motorola Inc]
ON Semi
MOTOROLA[Motorola, Inc]
Diotec Elektronische
Part No. 1N5356B 1N5364B 1N5347B 1N5349B 1N5339B 1N5371B 1N5338B 1N5352B 1N5366B 1N5374B 1N5372B 1N5375B 1N5333B 1N5378B 1N5344B 1N5355B 1N5353B 1N5342B 1N5388B 1N5359B 1N5345B 1N5381B 1N5363B 1N5383B 1N5336B ON0008 1N5341B 1N5361B 1N5334B 1N5335B 1N5337B 1N5340B 1N5343B 1N5346B 1N5348 1N5348B 1N5350B 1N5351B 1N5357B 1N5358B 1N5360B 1N5362B 1N5365B 1N5367B 1N5368B 1N5369B 1N5370B 1N5373B 1N5376B 1N5377B 1N5379B 1N5380B 1N5382B 1N5384B 1N5385B 1N5386 1N5386B 1N5387B 1N5333BTHRU1N5388B 1N5354B
OCR Text ... t, TIME (SECONDS) Figure 4. typical Thermal Response L, Lead Length = 3/8 Inch JL, JUNCTION-TO-LEAD THERMAL RESISTANCE (C/W) 40 i r , PEAK SURGE CURRENT (AMPS) 40 20 PW = 1 ms* 10 4 2 1 0.4 0.2 1 0.1 3 4 6 8 10 20 30 *SQUARE WAVE PW =...
Description    5 WATT ZENER REGULATOR DIODES 3.3-200 VOLTS
5 WATT ZENER REGULATOR DIODES 3.3-200 VOLTS 16 V, 5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
5 WATT ZENER REGULATOR DIODES 3.3-200 VOLTS 47 V, 5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
5 WATT ZENER REGULATOR DIODES 3.3-200 VOLTS 12 V, 5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
5 WATT ZENER REGULATOR DIODES 3.3-200 VOLTS 3.3 V, 5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
5 WATT ZENER REGULATOR DIODES 3.3-200 VOLTS 6 V, 5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
5 WATT ZENER REGULATOR DIODES 3.300 VOLTS 5瓦稳压稳压二极管3.30
MOSFET P-CH 250V 200MA SOT-89
500 mW DO-35 Glass Zener Voltage Regulator Diodes
From old datasheet system
Silicon-Power-Z-Diodes (non-planar technology)

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    27C4001 M27C4001 M27C4001-10B1 M27C4001-10B1TR M27C4001-10B1X M27C4001-10B6TR M27C4001-10B6X M27C4001-10C1TR M27C4001-10

ST Microelectronics
STMicroelectronics
Part No. 27C4001 M27C4001 M27C4001-10B1 M27C4001-10B1TR M27C4001-10B1X M27C4001-10B6TR M27C4001-10B6X M27C4001-10C1TR M27C4001-10C1X M27C4001-10C6TR M27C4001-10C6X M27C4001-10F1TR M27C4001-10F1X M27C4001-10F6TR M27C4001-10F6X M27C4001-10L1TR M27C4001-10L1X M27C4001-10L6TR M27C4001-10L6X M27C4001-10N1TR M27C4001-10N1X M27C4001-10N6TR M27C4001-10N6X M27C4001-10XB1TR M27C4001-10XB1X M27C4001-10XB6TR M27C4001-10XB6X M27C4001-10XC1TR M27C4001-10XC1X M27C4001-10XC6TR M27C4001-10XC6X M27C4001-10XF1TR M27C4001-10XF1X M27C4001-10XF6TR M27C4001-10XF6X M27C4001-10XL1TR M27C4001-10XL1X M27C4001-10XL6TR M27C4001-10XL6X M27C4001-10XN1TR M27C4001-10XN1X M27C4001-10XN6TR M27C4001-10XN6X M27C4001-12B1TR M27C4001-12B1X M27C4001-12B6TR M27C4001-12B6X M27C4001-12C1TR M27C4001-12C1X M27C4001-12C6TR M27C4001-12C6X M27C4001-12F1TR M27C4001-12F1X M27C4001-12F6TR M27C4001-12F6X M27C4001-12L1TR M27C4001-12L1X M27C4001-12L6TR M27C4001-12L6X M27C4001-12N1TR M27C4001-12N1X M27C4001-12N6TR M27C4001-12N6X M27C4001-12XB1TR M27C4001-12XB1X M27C4001-12XB6TR M27C4001-12XB6X M27C4001-12XC1TR M27C4001-12XC1X M27C4001-12XC6TR M27C4001-12XC6X M27C4001-12XF1TR M27C4001-12XF1X M27C4001-12XF6TR M27C4001-12XF6X M27C4001-12XL1TR M27C
OCR Text ...5V PROGRAMMING TIME: 100s/byte (typical) ELECTRONIC SIGNATURE - Manufacturer Code: 20h - Device Code: 41h FDIP32W (F) PDIP32 (B) LCCC32W (L) DESCRIPTION The M27C4001 is a 4 Mbit EPROM offered in the two ranges UV (ultra violet e...
Description From old datasheet system
4 Mbit (512Kb x 8) UV EPROM and OTP EPROM
4 Mbit 512Kb x 8 UV EPROM and OTP EPROM

File Size 110.77K  /  16 Page

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    2SA1010 2SA1010-AZ 2SA10102

NEC[NEC]
Part No. 2SA1010 2SA1010-AZ 2SA10102
OCR Text ... 80 L 60 to 120 K 100 to 200 typical CHARACTERISTICS (Ta = 25C) Total Power Dissipation PT (W) With infinite heatsink Ambient Temperature Ta (C) Collector Current IC (A) 2 mm aluminum board, no insulating board, grease co...
Description Silicon transistor
SILICON POWER TRANSISTOR
7 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-220AB SC-46, 3 PIN

File Size 115.28K  /  6 Page

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    2SA1031 2SA1032 2SA1031B 2SA1031D

HITACHI[Hitachi Semiconductor]
Microsemi, Corp.
Part No. 2SA1031 2SA1032 2SA1031B 2SA1031D
OCR Text ...) 300 Collector Current IC (mA) typical Output Characteristics (1) -10 -25 -8 -20 -6 -4 -15 -10 -5 A IB = 0 0 100 150 50 Ambient Temperature Ta (C) 0 -0.2 -0.4 -0.6 -0.8 -1.0 Collector Emitter Voltage VCE (V) 200 100 -2 typical ...
Description Silicon PNP Transistor
Silicon PNP Epitaxial
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
5-Pin &#181;P Supervisory Circuits with Watchdog and Manual Reset 5个引amp;#181;带看门狗和手动复位的P监控电路

File Size 30.18K  /  7 Page

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    2SA1083 2SA1084 2SA1085

HITACHI[Hitachi Semiconductor]
Part No. 2SA1083 2SA1084 2SA1085
OCR Text ...ctor current IC (mA) -50 -1 typical Output Characteristics (1) 40 -1 -40 20 0 -10 -80 -60 400 -30 P -40 C =0 .4 W -20 200 -20 A -10 IB = 0 0 50 100 150 Ambient Temperature Ta (C) 0 -4 ...
Description Silicon PNP Transistor
Silicon PNP Epitaxial

File Size 40.84K  /  8 Page

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    2SA1190 2SA1191

HITACHI[Hitachi Semiconductor]
Part No. 2SA1190 2SA1191
OCR Text ...) 600 Collector Current IC (mA) typical Output Characteristics (1) -20 -3 0 -16 PC -2 mW 00 =4 5 -20 400 -12 -15 -8 -10 -5 A 200 -4 IB = 0 0 50 100 150 Ambient Temperature Ta (C) 0 -20 -40 -60 -80 -100 ...
Description Silicon PNP Epitaxial

File Size 44.42K  /  10 Page

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    2SA1193 2SA1193K

HITACHI[Hitachi Semiconductor]
Part No. 2SA1193 2SA1193K
OCR Text ...or to Emiter Voltage VCE (V) typical Output Characteristics -500 Collector current IC (mA) 00 -1 -80 0 -6 DC Current Transfer Ratio vs. Collector Current 100,000 DC Current transfer ratio hFE 30,000 10,000 3,000 1,000 300 100 -10 VCE...
Description Silicon PNP Epitaxial/ Darlington
Silicon PNP Epitaxial, Darlington

File Size 33.83K  /  6 Page

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    2SA1194 2SA1194K

Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
Part No. 2SA1194 2SA1194K
OCR Text ...age VCE (V) 2 2SA1194(K) typical Output Characteristics P c= .0 -0.8 8W -1 .6 TC = 25C -0 4 -0. DC Current Transfer Ratio vs. Collector Current 100,000 DC current transfer ratio hFE 30,000 10,000 3,000 1,000 300 100 -10 VCE = -3 V Pu...
Description Silicon PNP Epitaxial

File Size 34.49K  /  5 Page

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    2SA673 2SA673A

Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
Part No. 2SA673 2SA673A
OCR Text ...r Power Dissipation PC (mW) 600 typical Output Characteristics (1) -100 -1. 0 Collector Current IC (mA) -80 -0.9 -0.8 PC = 40 0 W m -0.6 -0.7 -60 400 -0.5 -40 -0.4 -0.3 200 -20 -0.2 -0.1 mA IB = 0 0 ...
Description Silicon PNP Epitaxial(小信号晶体管)

File Size 30.13K  /  6 Page

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